Patent · US Active

Ablation method and recipe for wafer level underfill material patterning and removal

US9786517B2 · kind B2 · utility

0Cited by
13References
13Claims
0Family size

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Key dates

Filing dateSep 9, 2013
Grant dateOct 10, 2017
Priority date
Expiry dateSep 20, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Introducing an underfill material over contact pads on a surface of an integrated circuit substrate; and ablating the introduced underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation. A method including first ablating an underfill material to expose an area of contact pads on a substrate using temporally coherent electromagnetic radiation; introducing a solder to the exposed area of the contact pads; and second ablating the underfill material using temporally coherent electromagnetic radiation. A method including introducing an underfill material over contact pads on a surface of an integrated circuit substrate; defining an opening in the underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation; introducing a solder material to the exposed area of the contact pads; and after introducing the solder, removing the sacrificial material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.