Surface nitridation in metal interconnects
US9786603B1 · kind B1 · utility
9Cited by
32References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2016 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Sep 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Conductive contacts and methods of forming vias include forming a trench that penetrates a dielectric layer to expose a surface of an underlying conductor. Exposed surfaces of the dielectric layer and the exposed surface of the underlying conductor are nitridized to form a layer of nitridation at the exposed surfaces. The exposed surface of the underlying conductor is etched away to form a recessed area in the underlying conductor. A conductive via is formed in the trench and the recessed area that forms a conductive contact with the underlying conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.