Semiconductor device and a method for manufacturing a semiconductor device
US9786620B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 27, 2015 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Jul 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to various embodiments, a semiconductor device may include: at least one first contact pad on a front side of the semiconductor device; at least one second contact pad on the front side of the semiconductor device; a layer stack disposed at least partially over the at least one first contact pad, wherein the at least one second contact pad is at least partially free of the layer stack; wherein the layer stack includes at least an adhesion layer and a metallization layer; and wherein the metallization layer includes a metal alloy and wherein the adhesion layer is disposed between the metallization layer and the at least one first contact pad for adhering the metal alloy of the metallization layer to the at least one first contact pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.