Semiconductor structure including a transistor including a gate electrode region provided in a substrate and method for the formation thereof

US9786657B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Uwe Dersch · Radebeul, DE
• Ricardo Pablo. Mikalo · Luckau, DE

Key dates

• Filing date: Apr 4, 2016
• Grant date: Oct 10, 2017
• Expiry date: Apr 4, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

A semiconductor structure includes a bulk semiconductor substrate, an electrically insulating layer over the substrate, an active layer of semiconductor material over the electrically insulating layer and a transistor. The transistor includes an active region, a gate electrode region and an isolation junction region. The active region is provided in the active layer of semiconductor material and includes a source region, a channel region and a drain region. The gate electrode region is provided in the bulk semiconductor substrate and has a first type of doping. The isolation junction region is formed in the bulk semiconductor substrate and has a second type of doping opposite the first type of doping. The isolation junction region separates the gate electrode region from a portion of the bulk semiconductor substrate other than the gate electrode region that has the first type of doping.