Patent · US Active

Fabrication method of a stack of electronic devices

US9786658B2 · kind B2 · utility

0Cited by

4References

11Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Benoit Mathieu · Grenoble, FR
Claire Fenouillet-Beranger · Grenoble, FR

Key dates

Filing date	Dec 22, 2016
Grant date	Oct 10, 2017
Priority date	—
Expiry date	Dec 22, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/05442
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This method comprises the following steps: a) providing a first structure successively comprising a first substrate, a first electronic device, and a first dielectric layer; a second structure successively comprising a second substrate, an active layer, a second dielectric layer, and a polycrystalline semiconductor layer, the active layer being designed to form a second electronic device; b) bombarding the polycrystalline semiconductor layer by a beam of species configured to form an amorphous part and to preserve a superficial polycrystalline part; c) bonding the first and second structures; d) removing the second substrate of the second structure; e) introducing dopants into the amorphous part, through the exposed active layer; f) thermally activating the dopants by recrystallization of the amorphous part.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.