Semiconductor device and method for fabricating the same
US9786662B1 · kind B1 · utility
2Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2016 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Aug 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a first gate pattern is formed on the substrate, a first spacer is formed around the first gate pattern, part of the first gate pattern is removed to form a first slot, a first dielectric layer is formed into the first slot, and a replacement metal gate (RMG) process is performed to transform part of the first gate pattern into a metal gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.