FINFET having notched fins and method of forming same
US9786765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2016 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Feb 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One aspect of the disclosure provides for a method of forming a replacement gate structure. The method may include: removing a dummy gate from over a set of fins to form an opening in a dielectric layer exposing the set of fins, each fin in the set of fins being substantially separated from an adjacent fin in the set of fins via an dielectric; forming a protective cap layer within the opening over the exposed set of fins; removing a portion of the dielectric on each side of each fin in the set of fins; undercutting each fin by removing a portion of each fin in the set of fins to create a notch disposed under the protective cap layer; substantially filling each notch with an oxide; forming a gate dielectric over each fin in the set of fins; and forming a gate conductor over the gate dielectric, thereby forming the replacement gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.