Patent · US Active

Vacuum-processing apparatus, vacuum-processing method, and storage medium

US9790590B2 · kind B2 · utility

2Cited by
2References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 30, 2013
Grant dateOct 17, 2017
Priority date
Expiry dateAug 24, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/01
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.