Method of producing high quality silicon carbide crystal in a seeded growth system
US9790619B2 · kind B2 · utility
23Cited by
48References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 12, 2011 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Jul 5, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.