Method and system for providing magnetic junctions with rare earth-transition metal layers
US9792971B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2015 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Jul 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic junction usable in magnetic devices is described. The magnetic junction includes a reference layer, a free layer, a nonmagnetic spacer layer between the reference and free layers, and a rare earth-transition metal (RE-TM) layer in the reference and/or free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. If the RE-TM layer is in the free layer then the RE-TM layer is between hard and soft magnetic layers in the free layer. In this aspect, the RE-TM layer has a standby magnetic moment greater than a write magnetic moment. If the RE-TM layer is in the reference layer, then the magnetic junction includes a second RE-TM layer. In this aspect, a first saturation magnetization quantity of the RE-TM layer matches a second saturation magnetization quantity of the second RE-TM layer over an operating temperature range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.