Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

US9793110B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Hu Kang · Tualatin, US
• Shankar Swaminathan · Hillsboro, US
• Jun Qian · Sunnyvale, US
• Wanki Kim · Chappaqua, US
• Dennis M. Hausmann · Lake Oswego, US
• Bart J. van Schravendijk · Sunnyvale, US
• Adrien LaVoie · Newberg, US

Key dates

• Filing date: Jan 4, 2016
• Grant date: Oct 17, 2017
• Expiry date: Jan 4, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76826
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.