Method of cyclic dry etching using etchant film
US9793135B1 · kind B1 · utility
452Cited by
710References
18Claims
0Family size
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Key dates
| Filing date | Jul 14, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Jul 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a halogen-containing film using reactive species on the target layer on the substrate; and etching the halogen-containing film using a plasma of a non-halogen etching gas, which plasma alone does not substantially etch the target layer, to generate etchant species at a boundary region of the halogen-containing film and the target layer, thereby etching a portion of the target layer in the boundary region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.