Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices

US9793164B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Vladimir Machkaoutsan · Leuven, BE
• Stanley Seungchul Song · San Diego, US
• John Jianhong Zhu · San Diego, US
• Junjing Bao · Fishkill, US
• Jeffrey Junhao Xu · San Diego, US
• Mustafa Badaroglu · Kessel-Lo, BE
• Matthew Michael Nowak · San Diego, US
• Choh Fei Yeap · San Diego, US

Key dates

• Filing date: Nov 12, 2015
• Grant date: Oct 17, 2017
• Expiry date: May 2, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/461
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Self-aligned metal cut and via for Back-End-Of-Line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices, is disclosed. In this manner, mask placement overlay requirements can be relaxed. This relaxation can be multiples of that allowed by conventional BEOL techniques. This is enabled through application of different fill materials for alternating lines in which a conductor will later be placed. With these different fill materials in place, a print cut and via mask is used, with the mask allowed to overlap other adjacent fill lines to that of the desired line. Etching is then applied that is selective to the desired line but not adjacent lines.