FinFET device on silicon-on-insulator and method of forming the same
US9793174B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Sep 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin field effect transistor (FinFET) on a silicon-on-insulator and method of forming the same are provided in the present invention. The FinFET includes first fin structure, second fin structure and an insulating layer. The first fin structure and the second fin structure are disposed on a substrate. The insulating layer covers the first fin structure and the second fin structure and exposes a first portion of the first fin structure and a second portion of the second fin structure. The first fin structure has a first height and the second fin structure has a second height different from the first height, and a top surface of the first fin structure and a top surface of the second fin structure are at different levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.