Ion flow barrier structure for interconnect metallization
US9793213B2 · kind B2 · utility
2Cited by
9References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 16, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Feb 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an ion flow barrier between conductors includes forming a barrier material through a via in an interlevel dielectric layer and onto a first metal layer and recessing the barrier material to form a thickness of the barrier material on the first metal layer in the via, the thickness forming an ion flow barrier. A second metal layer is deposited in the via over the ion flow barrier such that, during operation, the ion flow barrier reduces ion flow between the first metal layer and the second metal layer while maintaining low resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.