Multilayered seed structure for perpendicular MTJ memory element
US9793319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Oct 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multiple layers of a second transition metal; and a first magnetic layer formed on top of the multilayered seed structure. The first magnetic layer has a multilayer structure formed by interleaving layers of the first transition metal with layers of a magnetic material and has a first fixed magnetization direction substantially perpendicular to a layer plane thereof. The first transition metal is platinum or palladium, while the second transition metal is selected from the group consisting of tantalum, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, and tungsten.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.