Silicon carbide semiconductor device and method of manufacturing the same
US9793376B2 · kind B2 · utility
3Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Aug 6, 2013 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Aug 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a silicon carbide semiconductor device including a vertical switching element having a trench gate structure, with the use of a substrate having an off angle with respect to a (0001) plane or a (000-1) plane, a trench is formed from a surface of a source region to a depth reaching a drift layer through a base region so that a side wall surface of the trench faces a (11-20) plane or a (1-100) plane, and a gate oxide film is formed without performing sacrificial oxidation after formation of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.