Cleaning liquid for lithography and method for cleaning substrate
US9796953B2 · kind B2 · utility
1Cited by
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18Claims
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Key dates
| Filing date | Oct 28, 2015 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Feb 9, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.