Single ALD cycle thickness control in multi-station substrate deposition systems
US9797042B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2014 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Jun 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67207
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are methods of depositing films of material on multiple semiconductor substrates in a multi-station processing chamber. The methods may include loading a first set of one or more substrates into the processing chamber at a first set of one or more process stations and depositing film material onto the first set of substrates by performing N cycles of film deposition. Thereafter, the methods may further include transferring the first set of substrates from the first set of process stations to a second set of one or more process stations, loading a second set of one or more substrates at the first set of process stations, and depositing film material onto the first and second sets of substrates by performing N′ cycles of film deposition, wherein N′ is not equal to N. Also disclosed are apparatuses and computer-readable media which may be used to perform similar operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.