Methods, apparatus, and systems for minimizing defectivity in top-coat-free lithography and improving reticle CD uniformity
US9798244B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2015 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | May 16, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods, apparatus, and system for minimizing defectivity in top-coat-free immersion photolithography are provided. Embodiments include forming a photomask by defining a first pattern including a main functional pattern in the photomask; and defining a second pattern including a sub-resolution fill pattern in the photomask in areas between or and/or within structures of the first pattern, the fill pattern having a pitch or range of pitches smaller than a minimum resolved pitch of the lithographic exposure and/or at least a part of the sub-resolution structures of the sub-resolution fill pattern not substantially modifying an imaging of any structure of the main functional pattern in the lithographic exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.