Substrate processing method and control apparatus
US9798317B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2014 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Jul 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a substrate processing method of filling a recess of a predetermined uneven pattern formed on a substrate with a film forming material by performing a first film forming processing, a first etching processing and a second film forming processing on the substrate, using a vertical substrate processing apparatus and a control apparatus controlling operations of the vertical substrate processing apparatus. The method includes calculating a first film forming condition, a first etching condition, and a second film forming condition by the control apparatus such that the film forming material is filled in the recess without any void after the second film forming processing; and performing the first film forming processing, the first etching processing and the second film forming processing on the substrate based on the calculated first film forming condition, first etching condition and second film forming condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.