Device manufacturing apparatus and manufacturing method of magnetic device using structure to pass ion beam
US9799482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2016 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Mar 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion configured to hold a substrate, an ion source, an anode disposed in a housing of the ion source, and a cathode disposed outside the housing of the ion source. A first opening can be disposed in a portion of the housing such the anode is exposed to a region between the anode and the substrate holding portion. The ion source can be configured to generate an ion beam with which the substrate is irradiated. A first structure can be disposed between the ion source and the substrate holding portion. The first structure can have a first through hole through which the ion beam can pass. The first structure can include a conductor, and an opening dimension of the first through hole can be equal to or larger than an opening dimension of the first opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.