Cobalt interconnects covered by a metal cap
US9799555B1 · kind B1 · utility
3Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2016 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Jun 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnects for a chip and methods of forming such interconnects. An opening is formed in a dielectric layer and a contact is formed in the opening. A metal cap is formed on a top surface of the contact. The contact is comprised of cobalt, and the metal cap covers the top surface of the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.