IGBT having a deep superjunction structure

US9799725B2 · kind B2 · utility

Assignee

• Infineon Technologies Americas Corp. · US

Inventors

• Florin Udrea · Cambridge, GB
• Alice Pei-Shan Hsieh · Cambridge, GB
• Gianluca Camuso · Cambridge, GB
• Chiu Ng · El Segundo, US
• Yi Tang · Torrance, US
• Rajeev Krishna Vytla · Los Angeles, US

Key dates

• Filing date: Dec 31, 2015
• Grant date: Oct 24, 2017
• Expiry date: Dec 31, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes a gate trench extending through a base having the second conductivity type into the drift region. In addition, the IGBT includes a deep superjunction structure situated under the gate trench. The deep superjunction structure includes one or more first conductivity regions having the first conductivity type and two or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the two or more second conductivity regions configured to substantially charge-balance the deep superjunction structure.