Semiconductor device with field electrode and contact structure

US9799738B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Ralf Siemieniec · Villach, AT
• Oliver Blank · Villach, AT
• Michael Hutzler · Villach, AT
• David Laforet · Villach, AT
• Cedric Ouvrard · Villach, AT
• Li Juin Yip · Villach, AT

Key dates

• Filing date: Aug 7, 2015
• Grant date: Oct 24, 2017
• Expiry date: Aug 7, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor device includes a field electrode structure with a field electrode and a field dielectric surrounding the field electrode. A semiconductor body includes a transistor section surrounding the field electrode structure and including a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section. The body zone forms a first pn junction with the source zone and a second pn junction with the first drift zone section. A gate structure surrounds the field electrode structure and includes a gate electrode and a gate dielectric separating the gate electrode and the body zone. A contact structure directly adjoins the source and body zones and surrounds the field electrode structure equably with respect to the field electrode structure.