Vertical transport FET devices with uniform bottom spacer

US9799749B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Zhenxing Bi · Dunn Loring, US
• Kangguo Cheng · Schenectady, US
• Juntao Li · Cohoes, US
• Xin Miao · Guilderland, US

Key dates

• Filing date: Aug 18, 2016
• Grant date: Oct 24, 2017
• Expiry date: Aug 18, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

Methods of fabrication and semiconductor structures includes vertical transport field effect transistors (VTFETs) having a uniform bottom spacer layer between different pattern density regions. The bottom spacer layer can be deposited by plasma vapor deposition.