STT-MRAM design enhanced by switching current induced magnetic field
US9799824B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Jun 1, 2016 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Jun 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.