Filament confinement in reversible resistance-switching memory elements
US9805793B2 · kind B2 · utility
10Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2016 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Apr 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/845
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided that includes providing a memory device including a first word line, a vertical bit line, a non-volatile memory material disposed between the first word line and the vertical bit line, and a memory cell disposed between the first word line and the vertical bit line. The first word line has a first height. The method further includes forming one or more conductive filaments in the memory cell. The one or more conductive filaments are substantially confined to a filament region having a second height less than the first height and disposed substantially about a vertical center of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.