Non-volatile memory cell and method of operating the same
US9805806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2016 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Sep 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory cell includes a substrate, a select gate, a floating gate, and an assistant control gate. The substrate includes a first diffusion region, a second diffusion region, a third diffusion region, and a fourth diffusion region. The select gate is formed above the first diffusion region and the second diffusion region in a polysilicon layer. The floating gate is formed above the second diffusion region, the third diffusion region and the fourth diffusion region in the polysilicon layer. The assistant control gate is formed above the floating gate in a metal layer, wherein an area of the assistant control gate overlaps with at least half an area of the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.