Inventor · Hengshan, TW

Hsueh-Wei Chen

11Patents

1h-index

10Co-inventors

43Inventor score

Filing activity: Sep 25, 2016 → Nov 7, 2023

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9805806B2	Non-volatile memory cell and method of operating the same	Electricity	7	Active
US10115682B2	Erasable programmable non-volatile memory	Electricity	1	Active
US11818887B2	Erasable programmable single-poly non-volatile memory cell and associated array structure	Emerging Cross-Sectional Technologies	1	Active
US9812212B2	Memory cell with low reading voltages	Electricity	0	Active
US11877456B2	Memory cell of non-volatile memory	Electricity	0	Active
US11663455B2	Resistive random-access memory cell and associated cell array structure	Emerging Cross-Sectional Technologies	0	Active
US12400716B2	Memory cell and array structure of non-volatile memory and associated control method	Physics	0	Active
US11245004B2	Memory cell with isolated well region and associated non-volatile memory	Electricity	0	Active
US11980029B2	Erasable programmable single-ploy non-volatile memory cell and associated array structure	Electricity	0	Active
US10797063B2	Single-poly nonvolatile memory unit	Physics	0	Active
US11049564B2	Erasable programmable non-volatile memory	Physics	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.