Patent · US Active

Defect observation method and defect observation device

US9811897B2 · kind B2 · utility

1Cited by
0References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 6, 2013
Grant dateNov 7, 2017
Priority date
Expiry dateDec 6, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06T2207/30148
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The purpose of the present invention is to easily extract, from samples to be observed, defect candidates that can be labeled as a defect or “nuisance” (a part for which a manufacturing tolerance or the like is erroneously detected) and to allow parameters pertaining to observation processing to be easily adjusted. This defect observation method comprises: an imaging step to image, on the basis of defect information from an inspection device, an object to be inspected and obtain a defect image and a reference image corresponding to the defect image; a parameter determining step to determine a first parameter to be used in the defect extraction by using a first feature set distribution acquired from the reference image and the defect image captured in the imaging step and a second feature net distribution acquired from the reference image; and an observing step to observe using the first parameter determined in the parameter determining step. The present invention can be applied to a method of observing defects generated during the manufacturing of semiconductor wafers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.