Tungsten sintered compact sputtering target and method for producing same
US9812301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2014 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Mar 20, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/165
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a tungsten sintered compact sputtering target containing iron as an impurity in an amount of 0.8 wtppm or less, and remainder being tungsten and other unavoidable impurities, wherein a range of iron concentration in a target structure is within a range of ±0.1 wtppm of an average concentration. Additionally provided is a tungsten sintered compact sputtering target, wherein a relative density of the target is 99% or higher, an average crystal grain size is 50 μm or less, and a crystal grain size range is 5 to 200 μm. The present invention aims to inhibit abnormal grain growth in the tungsten target by reducing the amount of iron in the tungsten sintered compact sputtering target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.