Patent · US Active

Low temperature molecular layer deposition of SiCON

US9812318B2 · kind B2 · utility

1Cited by
2References
20Claims
0Family size

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Key dates

Filing dateJul 16, 2015
Grant dateNov 7, 2017
Priority date—
Expiry dateJan 19, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02126
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.