Encapsulation of advanced devices using novel PECVD and ALD schemes
US9812338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Mar 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of a multi-layer environmental barrier for a semiconductor device and methods of manufacturing the same are disclosed. In one embodiment, a semiconductor device is formed on a semiconductor die. The semiconductor die includes a semiconductor body and a passivation structure on the semiconductor body. A multi-level environmental barrier is provided on the passivation structure. The multi-layer environmental barrier is a low-defect multi-layer dielectric film that hermetically seals the semiconductor device from the environment. In one embodiment, the multi-layer environmental barrier has a defect density of less than 10 defects per square centimeter (cm2). By having a low defect density, the multi-layer environmental barrier serves as a robust barrier to the environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.