Inventor · Chapel Hill, NC, US

Zoltan Ring

24Patents
10h-index
15Co-inventors
68Inventor score

Filing activity: Apr 11, 2000 → Sep 26, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US6475889B1 Method of forming vias in silicon carbide and resulting devices and circuits Electricity 126 Expired
US7045404B2 Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof Electricity 123 Expired
US6515303B2 Method of forming vias in silicon carbide and resulting devices and circuits Electricity 113 Expired
US7125786B2 Method of forming vias in silicon carbide and resulting devices and circuits Electricity 112 Expired
US6649497B2 Method of forming vias in silicon carbide and resulting devices and circuits Electricity 106 Expired
US6946739B2 Layered semiconductor devices with conductive vias Electricity 102 Expired
US7906799B2 Nitride-based transistors with a protective layer and a low-damage recess Electricity 95 Expired
US7855401B2 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Electricity 92 Active
US7892974B2 Method of forming vias in silicon carbide and resulting devices and circuits Electricity 71 Active
US8563372B2 Methods of forming contact structures including alternating metal and silicon layers and related devices Electricity 18 Active
US7525122B2 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Electricity 10 Expired
US7858460B2 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Electricity 8 Active
US9812338B2 Encapsulation of advanced devices using novel PECVD and ALD schemes Electricity 6 Active
US9490169B2 Method of forming vias in silicon carbide and resulting devices and circuits Electricity 3 Active
US9934983B2 Stress mitigation for thin and thick films used in semiconductor circuitry Electricity 3 Active
US9142631B2 Multilayer diffusion barriers for wide bandgap Schottky barrier devices Electricity 3 Active
US9761439B2 PECVD protective layers for semiconductor devices Electricity 2 Active
US8202796B2 Method of forming vias in silicon carbide and resulting devices and circuits Electricity 1 Active
US8994073B2 Hydrogen mitigation schemes in the passivation of advanced devices Electricity 1 Active
US10367074B2 Method of forming vias in silicon carbide and resulting devices and circuits Electricity 0 Active
US9269662B2 Using stress reduction barrier sub-layers in a semiconductor die Electricity 0 Active
US9607955B2 Contact pad Electricity 0 Active
US11316028B2 Nitride-based transistors with a protective layer and a low-damage recess Electricity 0 Active
US9530647B2 Devices including ultra-short gates and methods of forming same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.