Rare-earth oxide based coatings based on ion assisted deposition
US9812341B2 · kind B2 · utility
3Cited by
34References
20Claims
0Family size
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Key dates
| Filing date | Jan 23, 2017 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Jan 23, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1393
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.