Control of the incidence angle of an ion beam on a substrate
US9812349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2015 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Dec 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One system includes a chamber, a chuck assembly, and an ion source. The chuck assembly includes a substrate support and a precession assembly with a center support coupled to a stationary center point of an under region of the substrate support. The precession assembly includes first and second actuators connected to first and second locations, respectively, that are in the under region off-set from the center point. The precession assembly imparts a precession motion to the substrate support when the first actuator and the second actuator move up and down relative to the center support, and the precession motion imparted to the substrate causes a rotating tilt of the substrate support without rotation of the substrate support. The rotating tilt of the substrate is configured to cause ions generated by the ion source to impinge upon a surface of the substrate in continually varying angles of incidence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.