FinFET structures and methods of forming the same
US9812358B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2016 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Sep 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
FinFET structures and methods of forming the same are disclosed. In a method, a recess is formed exposing a plurality of semiconductor fins on a wafer. A dummy contact material is formed in the recess. The dummy contact material contains carbon. The dummy contact material is cured with one or more baking steps. The one or more baking steps harden the dummy contact material. A first portion of the dummy contact material is replaced with an inter-layer dielectric. A second portion of the dummy contact material is replaced with a plurality of contacts. The plurality of contacts are electrically coupled to source/drain regions of the plurality of semiconductor fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.