Method of forming hybrid diffusion barrier layer and semiconductor device thereof
US9812397B2 · kind B2 · utility
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18References
19Claims
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Key dates
| Filing date | Dec 31, 2014 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Jun 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of fabricating a semiconductor device, an opening is formed inside a dielectric layer above a semiconductor substrate. The opening has a wall. At least one diffusion barrier material is then formed over the wall of the opening by at least two alternating steps, which are selected from the group consisting of a process of physical vapor deposition (PVD) and a process of atomic layer deposition (ALD). A liner layer is formed over the at least one diffusion barrier material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.