Multi-VT gate stack for III-V nanosheet devices with reduced parasitic capacitance
US9812449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2016 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | May 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A nanosheet field effect transistor design in which the threshold voltage is adjustable by adjusting the composition of the gate. The channel of the nanosheet field effect transistor may be composed of a III-V semiconductor material, and the gate, which may be separated from the channel by a high dielectric constant dielectric layer, may also be composed of a III-V semiconductor material. Adjusting the composition of the gate may result in a change in the affinity of the gate, in turn resulting in a change in the threshold voltage. In some embodiments the channel is composed, for example, of InxGa1-xAs, with x between 0.23 and 0.53, and the gate is composed of InAs1-yNy with y between 0.0 and 0.4, and the values of x and y may be adjusted to adjust the threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.