Self-aligned sacrificial epitaxial capping for trench silicide

US9812453B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• George R. Mulfinger · Gansevoort, US
• Lakshmanan H. Vanamurthy · Dresden, DE
• Scott Beasor · Greenwich, US
• Timothy J. McArdle · Ballston Lake, US
• Judson R. Holt · Wappingers Falls, US
• Hao Zhang · Beijing, CN

Key dates

• Filing date: Feb 13, 2017
• Grant date: Nov 7, 2017
• Expiry date: Feb 13, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a self-aligned sacrificial epitaxial cap for trench silicide and the resulting device are provided. Embodiments include forming a Si fin in a PFET region and a pair of Si fins in a NFET region; forming epitaxial S/D regions; forming a spacer over the S/D region in the PFET region; forming a sacrificial cap over the S/D regions in the NFET region, merging the pair of Si fins; removing the spacer from the S/D region in the PFET region; forming silicide trenches over the S/D regions in the PFET and NEFT regions; implanting dopant into the S/D region in the PFET region while the sacrificial cap protects the S/D regions in the NFET region; removing the sacrificial cap; and forming a metal layer over top surfaces of the S/D region in the PFET region and top and bottom surfaces of the S/D regions in the NFET region.