Formation method of semiconductor device structure
US9812549B2 · kind B2 · utility
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2References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 6, 2016 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Sep 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One or more formation methods of a semiconductor device structure are provided. The method includes forming a dummy gate stack over a semiconductor substrate and forming spacer elements over sidewalls of the dummy gate stack. The method also includes removing the dummy gate stack to form a recess between the spacer elements. The method further includes partially removing the spacer elements such that an upper portion of the recess becomes wider. In addition, the method includes forming a metal gate stack in the recess and forming a protection element over the metal gate stack to fill the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.