Patent · US Active

Projection exposure method and projection exposure apparatus for microlithography

US9817316B2 · kind B2 · utility

1Cited by

4References

34Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Boris Bittner · Roth, DE
Norbert Wabra · Werneck, DE
Martin von Hodenberg · Oberkochen, DE
Sonja Schneider · Lehrberg, DE

Key dates

Filing date	Mar 29, 2016
Grant date	Nov 14, 2017
Priority date	—
Expiry date	Mar 29, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70891
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern includes providing the pattern between an illumination system and a projection lens of a projection exposure apparatus so that the pattern is arranged in the region of an object plane of the projection lens and can be imaged via the projection lens into an image plane of the projection lens. The image plane is optically conjugate with respect to the object plane, and imaging-relevant properties of the pattern can be characterized by pattern data. The method also includes illuminating an illumination region of the pattern with an illumination radiation provided by the illumination system in accordance with an illumination setting which is specific to a use case and which can be characterized by illumination setting data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.