Methods of forming etch masks for sub-resolution substrate patterning
US9818611B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 20, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Sep 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques disclosed herein provide a method for pitch reduction (increasing pitch/feature density) for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts where specified. A sequence of materials or repeating pattern of lines of materials is used that provides selective self-alignment based on different etch resistivities. Combined with an underlying transfer or memorization layer, multiple different etch selectivities can be accessed. An etch mask defines which regions of the lines of multiple materials can be etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.