Semiconductor device with redistribution layers on partial encapsulation and non-photosensitive passivation layers
US9818685B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Mar 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include a semiconductor die having a first surface, a second surface opposite to the first surface, and side surfaces between the first and second surfaces; an encapsulant encapsulating the side surfaces of the semiconductor die; a contact pad on the first surface of the semiconductor die; and a redistribution layer coupled to the contact pad The redistribution layer may include a linear portion and a circular pad, and a hemispherical conductive bump on the circular pad may include a protruding part extending toward the linear portion and having a radius less than the hemispherical conductive bump. The second surface of the semiconductor die may be coplanar with a surface of the encapsulant. A dielectric layer may cover a portion of the first surface of the semiconductor die and a first surface of the encapsulant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.