Semiconductor device structure and method for forming the same
US9818834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Jan 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a substrate. The method includes removing a first portion of the dielectric layer to form a first hole in the dielectric layer. A second portion of the dielectric layer is under the first hole. The method includes forming a first protection layer over the gate stack and the spacer layer. The method includes forming a second protection layer over the first protection layer. The second protection layer includes a metal compound material, and the first protection layer and the second protection layer includes a same metal element. The method includes removing the second portion of the dielectric layer to form a through hole. The method includes forming a conductive contact structure in the through hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.