Multi-gate device and method of fabrication thereof

US9818872B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Kuo-Cheng Ching · Hsinchu, TW
• Ching-Wei Tsai · Hsinchu, TW
• Carlos H. Diaz · Baoshan, TW
• Chih-Hao Wang · Dashulong, TW
• Wai-Yi Lien · Baoshan, TW
• Ying-Keung Leung · Hong Kong, CN

Key dates

• Filing date: Jun 30, 2015
• Grant date: Nov 14, 2017
• Expiry date: Sep 29, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A method of semiconductor device fabrication is described that includes forming a fin extending from a substrate and having a source/drain region and a channel region. The fin includes a first epitaxial layer having a first composition and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second composition. The second epitaxial layer is removed from the source/drain region of the fin to form a gap. The gap is filled with a dielectric material. Another epitaxial material is formed on at least two surfaces of the first epitaxial layer to form a source/drain feature.