Back-illuminated sensor with boron layer
US9818887B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Jun 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.