Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications

US9822132B2 · kind B2 · utility

Assignees

• American Air Liquide, Inc. · US
• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Glenn Kuchenbeiser · Newark, US
• Christian Dussarrat · Tokyo, JP
• Venkateswara R. Pallem · Hockessin, US

Key dates

• Filing date: Jul 18, 2014
• Grant date: Nov 21, 2017
• Expiry date: Jul 18, 2034

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45553
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Disclosed are hexacoordinate silicon-containing precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel type devices, refractory materials, or aeronautics. The hexacoordinate silicon-containing molecule have the following formula: (I), wherein each L1, L2, L3 and L4 is independently selected from oxygen or nitrogen atoms; L1 and L2 are joined together via a carbon bridge having one to three carbon atoms; L3 and L4 are joined together via a carbon bridge having one to three carbon atoms; L1, L2 and the carbon bridge forming a monoanionic ligand bonded to silicon; and L3, L4 and the carbon bridge form a monoanionic ligand bonded to silicon.