Lithographic method
US9823572B2 · kind B2 · utility
Assignee
Inventors
- Andrey Nikipelov
- Olav Waldemar Vladimir Frijns
- Gosse Charles De Vries
- Erik Roelof Loopstra
- Vadim Yevgenyevich Banine
- Pieter Willem Herman De Jager
- Rilpho Ludovicus Donker
- Han-Kwang Nienhuys
- Borgert Kruizinga
- Wouter Joep ENGELEN
- Otger Jan Luiten
- Johannes Antonius Gerardus Akkermans
- Leonardus Adrianus Gerardus Grimminck
- Vladimir LITVINENKO
Key dates
| Filing date | Jun 17, 2014 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Jun 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2007/041
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.